Thermal Transport by Hot Carrier in sub-10 nm MoS2 Atomic Layer
Atomically thin MoS2 offers potential for advanced semiconductors and an alternative to graphene due to its unique electronic and optical properties. For its applications, hot carrier phenomenon plays a major role in high-speed devices like ultrafast photodetectors and hot-electron transistors. So far, most of methods used to study the hot carrier transport have to need to apply an electric field or electrical contact. However, there have been only a few reports regarding the hot carrier transport study of MoS2 nanosheets or the methods to exclude the potential influence on the transport measurement caused by the electrode. In this work, we report a novel approach for simultaneous determination of hot carrier diffusion coefficient and the interface thermal resistance of sub-10 nm exfoliated MoS2 nanosheets on c-Si. The hot carrier’s contribution in heat conduction by photon excitation, diffusion, and re-combination is studied by an optical-thermal method: non-contact micro-Raman spectroscopy based laser heating technique under variable micro-scale heating size. The experimental data for multilayer MoS2 nanosheets are studied in combination with 3-D numerical simulations of the heat distribution in the MoS2/c-Si interface system. We deduce a hot carrier diffusion coefficient of ~5 cm2/s and the interface thermal resistance of ~10-7 Km2/W for three MoS2 samples with different thickness. For the hot carrier diffusion coefficient study, ours has the advantage of being non-contact and non-invasive so that it is also applicable for non-contact detection of hot carrier transport investigation for other 2D material based structures.
This presentation has not yet been uploaded.
No handouts have been uploaded.
Xinwei Wang (Co-Author), Iowa State University, firstname.lastname@example.org ;
Pengyu Yuan (POC,Primary Presenter), Iowa State University , email@example.com;